| 摘要 |
PURPOSE:To form barrier metal in a contact hole with simplicity, accuracy, and high reproducibility by a method wherein a coating of barrier metal is provided on the entire surface of an insulating film including a contact hole and the entire surface of the barrier metal is subjected to etching that is accomplished by an ion beam projected from an oblique direction. CONSTITUTION:A coating of barrier metal 15 is provided on the entire surface of an intermediate insulating film 13 including a contact hole 14. Thereafter, the entire surface of the barrier metal 15 is subjected to etching by an ion beam 16 projected from an oblique direction. The ion beam 16, projected from an oblique direction, does not reach the bottom of the contact hole 14. This means that the barrier metal 15 remaining at the bottom of the contact hole 14 retains its original thickness. On the side walls of the contact hole 14, except the locations near the opening, some barrier metal 15 remains surviving the etching. That is to say, the barrier metal 15 is formed only in the contact hole 14.
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