| 摘要 |
PURPOSE:To prevent characteristic deterioration caused by short-channeling without processes to be increased, by forming side walls on side faces of a gate electrode, by the user of a mask material existing on a P-channel transistor region, and performing ion implantation of P-type impurities all over the surface, to form P-type diffusion layers, and then forming N-type diffusion layers by the same way. CONSTITUTION:A mask material 16 for ion implantation, such as a nitrided film, is applied, and then a photo resist 7 is put on to remove only P-channel transistor regions. And then, the mask material 16 is etched so that side walls 16A can be made to remain on the side faces of a gate electrode 14A. Successively, after removing the photo resist 17, ion implantation of boron is performed to form P-type diffusion layers 18. While covering only the P-channel transistor regions with photo resists 19, and making side walls 16B comprising an ion implantation mask material to remain at the side faces of a gate electrode 14B in a N-channel transistor, by the use of anisotropic dry etching, ion implantation of arsenic is performed to form N-type diffusion layers 20 in the N- channel transistor regions. As the following process, insulating films, opening parts, metal wirings, and so on are formed. |
