| 摘要 |
PURPOSE:To form a fine pattern as good as the electron beam exposure or X-ray exposure by developing the photoresist in the portion except for part thereof, and removing the remaining photoresist of the pattern portion through further directional etching. CONSTITUTION:A positive-type photoresist 2 is applied on the surface of a substrate 1, a quartz mask 3 is provided, and far ultraviolet rays 4 are directed. Thereafter, this is developed so that the photoresist film 2 remains. Then, with the reactive ion etching which is etching having directionality, the remaining photoresist film is etched to the surface of the substrate 1 using, e.g., a O2 gas. In this case, since the directional etching is used, lateral expansion of the photoresist opening does not occur. With this, a fine pattern substantially equal to the mask width can be formed.
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