发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To expand freedom in circuit design, by sequentially laminating an upper wiring layer, an insulating layer, a ferromagnetic layer, an insulating layer and a lower wiring layer on a semiconductor substrate, forming the ferromagnetic layer between the upper and lower wiring layers, and providing positional relationship so as to obtain transformer coupling. CONSTITUTION:On a semiconductor substrate 1, a ferromagnetic layer 5 comprising ferrite and Permalloy is formed between a first wiring layer 3 and a second wiring layer 4 through an insulating layer 2. The first wiring layer 3 and the second wiring layer 4 are formed in a spiral shape or a loop shape. The centers of both layers are made to agree. In this constitution, a transformer is formed by the first wiring layer 3, the ferromagnetic layer 5 and the second wiring layer 4 on the semiconductor substrate. Therefore, a transformer coupling circuit can be provided within the semiconductor integrated circuit device without using an externally attaching method. Thus the freedom in circuit design is improved.
申请公布号 JPS61294850(A) 申请公布日期 1986.12.25
申请号 JP19850135572 申请日期 1985.06.21
申请人 NEC CORP 发明人 KUWABARA ICHIRO
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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