| 摘要 |
PURPOSE:To remove semiconductor devices inferior in humidity resistance during the process by etching the aluminum for wiring of the portion which is not covered with a plasma nitride film. CONSTITUTION:A wafer 1 on which an amorphous silicon film 8 is formed is dipped in a solution of the fluoric acid system, and with the amorphous silicon film 8 and a plasma nitride film 7 as a mask a CVD oxide film 6 and an aluminum wiring 5 are etched away. By this, since the aluminum wiring 5 on the portion on which the plasma nitride film is not formed is all removed, such a pellet is never processed up into a complete semiconductor device. With this, defective semiconductor devices having no plasma nitride film and inferior in humidity resistance are prevented from mixing into good products.
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