| 摘要 |
PURPOSE:To ensure the smoothing of the step parts of a wiring, by removing the corner parts of the wiring layer in the process of reducing the thickness of a film of a fluid by dry etching. CONSTITUTION:The thickness of a photoresist film 16 is reduced by dry etching such as plasma etching and reactive ion etching. In the reducing process of the film thickness, the corner parts of a first wiring layer 14 are removed. This is possible because the thickness of parts of the photoresist film corresponding to the corner parts of the first wiring layer 14 is thin. Thus the stepped parts on the wiring become smooth, and the coating property of an interlayer insulating film and the coating property of the wiring material on the interlayer insulating film are improved to a large extent.
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