| 摘要 |
PURPOSE:To make it possible to hole stably the semiconductor wafer set afloat by the jetting reaction gas on the jet flow of the reaction gas, by giving the semiconductor the gas balancing force or the gravitational potential, and by installing in the gas reaction part the means to float and hold the semiconductor wafer at the center of the force. CONSTITUTION:The semiconductor wafer 1 to be treated is mounted on the bend member 4B of the gas reacting part 4 in the reaction vessel 2. When the reaction gas G is supplied in this state from the pre-mixing equipment 6, it jets out upward from the injection hold 4A installed on the bend member 4B, after flowing into the gas vessel 4C of the gas reacting part 4 through the pipe 5. The semi-conductor wafer 1 is set afloat on the bend part 4B by the jet flow of the reaction gas from the injection hole 4A. Thus the semiconductor wafer 1 is held in the state wherein the wafer 1 does not physically contact with other bodies, and the reaction gas G acts on the lower surface of the wafer, where the eptaxial layer is grown and formed.
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