| 摘要 |
A silicon single crystal manufacturing method includes:
applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0 × 10 15 atoms/cm 3 as a raw material; rotating the crucible at 5.0 rpm or less; allowing inert gas to flow at rate A (m/sec) of formula (1) at a position 20-50% of Y above the melt surface; controlling the rate A within the range of 0.2 to 5, 000/d (m/sec) (d: crystal diameter (mm));
and reducing the total power of side and bottom heaters by 3 to 30% and the side heater power by 5 to 45% until the solidified fraction reaches 30%. A = Q ‹ 760 1000 ‹ 60 ‹ P ‹ ± / À ‹ X ‹ Y ‹ 10 6
Q: Inert gas volumetric flow rate (L/min)
P: Pressure (Torr) in furnace
X: Radiation shield opening diameter
Y: Distance (mm) from raw material melt surface to radiation shield lower end
± : Correction coefficient |
