| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit with logic circuit constitution having high speed operation, stable transmission characteristic, ease of manufacture process and high circuit integration by adopting an enhancement FET for both a load FET and a drive FET and inserting a Schottky barrier diode between the power supply and a gate of a load FET. CONSTITUTION:The enhancement FET is adopted for both the load FETQ1 and the drive FETQ2 and the Schottky barrier diode D is inserted between the power supply VDD and the gate of the load FETQ2. Thus, the inserted diode and a diode constituting a gate itself are connected in series, and two Schottky barrier diodes connected just in series are connected between the drain and source of the load FETQ1, then the gate-source voltage Vgs and the drain-source voltage Vds of the load FETQ1 are expressed in the relation of Vgs=(1/2).Vds and the FET operation is attained at the stable saturation region. |
