发明名称 GATE DRIVING CIRCUIT FOR GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To simplify the organization of a driving circuit, by feeding OFF-gate current and backward bias voltage to a GTO thyristor with a set of a DC power source and a switching element. CONSTITUTION:When a semiconductor switch 2 is closed at the time of zero hour, then the primary side current I1 and the secondary side current I2 of the I1 multiplied by (a), namely, the OFF-gate current of a GTO thyristor 7 get to flow to be increased, and after that, when the connection between the cathodes of the GTO thyristor 7 is counter-recovered, then the both current I1 and I2 get to be reduced. After that, the secondary side current I2 comes to zero, and the primary side current I1 comes to a constant value, and by the constant current, backward bias voltage is applied between the gate cathodes of the GTO thyristor 7. As the result, OFF-gate current and backward bias voltage can be fed through the same DC power source.
申请公布号 JPS61293155(A) 申请公布日期 1986.12.23
申请号 JP19850133734 申请日期 1985.06.19
申请人 FUJI ELECTRIC CO LTD 发明人 SAOTOME HIDEO
分类号 H02M1/06 主分类号 H02M1/06
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