| 摘要 |
PURPOSE:To lower resistance, and to prevent disconnections by forming a storage capacitance plate electrode, to which fixed potential is applied, by a composite film of polycrystalline silicon and a silicide or a high melting-point metal. CONSTITUTION:A storage capacitance plate electrode functions as a first layer gate electrode, and forms storage capacitance between an silicon substrate 1 and itself by a thin insulating film 12. The plate electrode is constituted from polycrystalline silicon 5 and a silicide layer 6 of tungsten, molybdenum or titanium on the polycrystalline silicon 5. Such a composite film is used as the plate electrode, thus lowering sheet resistance. Since the plate electrode is composed of the composite film of polycrystalline silicon and the silicide film even when there is a thin section A in the plate electrode, the plate electrode is connected electrically by the silicide film 6 on the polycrystalline film 5 even when isolation is generated by the grain boundary of the polycrystalline film 5, thus preventing disconnections. Accordingly, the variation of the potential of the plate electrode is avoided, thus resulting in stable memory operation while largely improving yield on the manufacture of a memory by a fine processing. |
