| 摘要 |
PURPOSE:To obtain nonlinear input/output characteristics by connecting a completely depleted P-N junction with the floating diffusion unit of a solid-state image sensor, thereby providing nonlinear charge/voltage conversion characteristic. CONSTITUTION:P-N junctions 30, 31 are connected with a floating diffusion unit 14. Transfer charge from a register is transferred through an output gate 13 to the unit 14, and the prescribed potential 13E is applied to the gate 13. When a potential of the electrode is varied, a signal charge is transferred to become signal charges (a), (b), (c), (d),.... The signal charge is transferred, and the charge (b) is moved to the unit 14. The electrostatic capacity of an electrostatic capacitor 15 is varied by a signal charge amount, and charge/potential conversion characteristic of the unit 14 becomes nonlinear.
|
