| 摘要 |
PURPOSE:To improve the coatability of an electrode material or a wiring material by executing isotropic dry etching and anisotropic dry etching onto an insulating film in succession to form a contact hole having a shape in which an upper section is widened. CONSTITUTION:An etching mask 14 with an opening section 14A corresponding to a desired contact hole is formed onto an insulating film 12 coating a semiconductor substrate 10, a recessed section 16 is shaped by executing isotropic dry etching only by the predetermined quantity of etching, and a contact hole 18 continuing to the recessed section 16 is formed by executing anisotropic dry etching, thus shaping the contact hole 18 in approximately the same size as the opening section 14A because side etching is hardly conducted. When the etching mask 14 is removed and an electrode metal is applied onto the whole surface on the substrate 10, the upper section of the contact hole 18 takes a shape that it is widened by the recessed section 16, thus smoothing a stepped section, then bringing the excellent state of coating with no disconnection at the stepped section. The electrode metal is patterned properly to obtain an electrode layer 20.
|
