PRODUCTION OF DISPLAY DEVICE

摘要

PURPOSE:To prevent etching down to a coating film by using an etching mask having apertures of the size smaller than the size of display electrodes within the range where the coating film of a substrate around the display electrodes are not exposed by side etching in the etching stage of an insulating film. CONSTITUTION:Gate electrodes 19' and display electrodes 11' are simultaneously formed of ITO on the coating film 101 consisting of SiO2 on the surface of the glass substrate 10 and the insulating film 12' consisting of Si3N4 is deposited thereon. A resist R is coated over the entire surface and is exposed by using the exposing mask M having the apertures M1 smaller by a size l=1mum than the size of the display electrodes 11' for the resist and is developed to remove the resist R at the electrode 11' points. The etching treatment is executed by using the resist R formed with the apertures R1 of the same size as the apertures M1 as a mask for etching. The size K of the side etching to dissolve the insulating film 12' is K