发明名称 Semiconductor device for use in a large scale integration circuit
摘要 An output signal is derived from an output buffer to an external lead in a semiconductor device. In general, the output buffer is constructed using an MOS transistor and is located near a bonding pad on the chip. Therefore, the number of bonding pads which can be formed on the chip is limited by the output buffer space. The present invention provides the output buffer with a tapered or tiered shape which reduces the pitch between bonding pads. Thus, a large number of bonding pads (output buffers) can be integrated in a semiconductor chip according to the present invention.
申请公布号 US4631571(A) 申请公布日期 1986.12.23
申请号 US19840589371 申请日期 1984.03.14
申请人 NEC CORPORATION 发明人 TSUBOKURA, FUSAO
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L23/485;H01L23/528;H01L27/04;H01L27/088;H01L27/118;(IPC1-7):H01L23/48;H01L29/44;H01L29/78;H01L27/10 主分类号 H01L21/822
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