发明名称 |
HIGH-FREQUENCY POWER AMPLIFIER AND RADIO COMMUNICATION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier that satisfies specifications of the gain of the amplifier and can improve the stability of the high-frequency power amplifier as a whole.SOLUTION: A high-frequency power amplifier 100 connecting in series a plurality of amplifiers using transistors connects, with metal 110 of an integrated circuit, the top surface of a silicon penetrating electrode TSV of: a first prescribed position A closest to an input terminal 101 of a transmission signal to be amplified by the high-frequency power amplifier; a second prescribed position B at an emitter terminal side of a transistor Tr1 used for a first stage amplifier; a third prescribed position C at a matching circuit provided between the first stage amplifier and a second stage amplifier; and a fourth prescribed position D at the emitter terminal side of a transistor Tr2 used for the second stage amplifier.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016111400(A) |
申请公布日期 |
2016.06.20 |
申请号 |
JP20140244245 |
申请日期 |
2014.12.02 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO LTD |
发明人 |
KOTANI NORIHISA;SUGIURA TAKESHI |
分类号 |
H03F1/08;H03F3/195;H03F3/24 |
主分类号 |
H03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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