| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate in which a thin film transistor which uses an oxide semiconductor for a channel layer is formed on a substrate, and which can improve voltage withstanding characteristics of a gate insulation layer without destabilizing electric characteristics of the thin film transistor.SOLUTION: A TFT substrate 20 comprises a substrate 110, a gate electrode 120, an oxide semiconductor layer 140, and a gate insulation layer 130 arranged between the gate electrode 120 and the oxide semiconductor layer 140. The gate insulation layer 130 includes a first insulation layer 131, a second insulation layer 132 and a third insulation layer 133 which are sequentially arranged from the gate electrode 120 side and composed of silicon nitride films, in which each of the first through third insulation layers has an atomic weight within a predetermined range; and a difference obtained by subtracting a film thickness of the third insulation layer 133 from a film thickness of the second insulation layer 132 is equal to or less than 50 nm; and a film density of the second insulation layer 132 is lower than each film density of the first insulation layer 131 and a third insulation layer 133.SELECTED DRAWING: Figure 4 |
