| 摘要 |
PURPOSE:In injecting an ion into compound semiconductor single crystal, to prevent effectively and easily axial channeling and plane channeling including ones with relatively high order index, by specifying the injection direction of ion beam to a specific condition. CONSTITUTION:In injecting an accelerated impure ion to the wafer 1 of compound semiconductor single crystal, conditions related to ion beam are specified as follows. Namely (a) the wafer 1 has the surface inclined by >=5 deg. from the plane (100) and the angle <MON between the normal line (OM line) stood on the wafer 1 and the ion beam 4 is >=7 deg. and (b) the beam projected line OK obtained by projecting the ion beam on the wafer 1 makes angles of >=10 deg. from 4 directions of clevage OP, OR, OQ and OS on the plane of the wafer 1.
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