发明名称 PRODUCTION SILICON CARBIDE WHISKER
摘要 PURPOSE:In producing silicon carbide whisker by reducing silicon dioxide with a CO gas, to easily obtain long whiskers by a simple device, by repeating alternately two processes using specific conditions. CONSTITUTION:Silicon dioxide is reduced by using the following two processes a and b. Namely, (a) a carbon monoxide gas is brought into contact with silicon dioxide put in a furnace at >=1,100 deg.C at <= normal pressure, to evolve a mixed gas of a silicon monoxide gas and the carbon monoxide gas. Then, (b) the carbon monoxide gas is added to the mixed gas evolved in the furnace, the gases are kept at >=1,100 deg.C at >= normal pressure, to form whiskers on a carbo naceous face in the furnace. The processes a and b are alternately repeated at least several times. A meterial for the reaction furnace and a container for allowing SiO2 powder to stand is preferably graphite calcined at >= about 2,000 deg.C. The above-mentioned normal pressure or lower than it is preferably <=0.4atm and the normal pressure or higher than it is preferably 1.2-2.0atm.
申请公布号 JPS61291496(A) 申请公布日期 1986.12.22
申请号 JP19850129125 申请日期 1985.06.15
申请人 NIPPON LIGHT METAL CO LTD 发明人 ICHIKAWA HACHIRO;TAKADA KOICHI;SAITO MASAO
分类号 C30B29/62;C30B25/00 主分类号 C30B29/62
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