| 摘要 |
PURPOSE:To scale down a junction area and the shape of a junction, and to improve high-frequency characteristics and reliability by forming a junction section through an impurity diffusion method for shaping a junction diode to the surface of a substrate and removing the diffused surface section of the substrate. CONSTITUTION:An N<+> type ion implantation layer 6 is formed onto a semi- insulating GaAs substrate 1. An N-type ion implantation layer 2 is shaped. An SiO2 film 9 is deposited, and annealed and treated to form each diffusion layer for N<+> type layers 3, 6 and the N-type active layer 2. A window is bored to one part 10 of the SiO2 film on the diode side. Zn as an acceptor impurity is diffused from the window opening section to shape a P<+> diffusion layer 7. SiO2 in the surface of the N<+> type layer on the diode side is removed. An inden tation section 11 is formed by using a GaAs etching liquid thereby electrodes 4, 5 are shaped.
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