| 摘要 |
PURPOSE:To inhibit the contact resistance from being increased and to eliminate the alloy spike, by implanting metallic ions through a contact window for forming a metal implantation layer, forming a connection layer on the contact widow and the insulation layer, and heat-treating the metal implantation layer and the connection layer in their regions where they are contacted with each other. CONSTITUTION:An insulation layer 3 is formed on one principal surface of a silicon substrate 1 such that the layer 3 has a contact window in a desired portion. Metallic ions are implanted in the substrate 1 through the contact window so as to form a metal implantation layer 5. A connection layer 6 of a metal which is homogeneous or heterogeneous with respect to the implanted metal is formed on the contact window and the insulating layer 3. The implantation layer 5 and the connection layer 6 are alloyed by a heat treatment in the regions where they are contacted with each other. Consequently, the contact resistance can be prevented from being increased and no alloy spike is produced.
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