发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To speed up a semiconductor device, by making the insulating film of an air-sponge structure, in the semiconductor device in which insulating films and conductive layers are sequentially laminated on a substrate. CONSTITUTION:The insulating film 5 insulates the first signal wiring from the signal wiring 4A, and the insulating film 6 insulates the signal wiring 4A from the signal wiring 4B. In this case, the insulating films 5, 6 are formed by cotton-like polyimide or cotton-like glass fiber, which is made of a sponge structure including air therein. In this way, since the insulating films 5, 6 including air inside them have a dielectric constant as small as about 1, the parasitic capacitance of the signal wiring 4A and the signal wiring 4B can be reduced. Accordingly, high-speed electrical operation can be attained in the semiconductor device.
申请公布号 JPS61290739(A) 申请公布日期 1986.12.20
申请号 JP19850131870 申请日期 1985.06.19
申请人 HITACHI LTD 发明人 TAKEO YOSHIHISA
分类号 H01L23/522;H01L21/31;H01L21/768 主分类号 H01L23/522
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