| 摘要 |
PURPOSE:To realize a surface light-emitting laser enabling continuous oscil lations at room temperature by reflecting laser beams, which are emitted from a semiconductor laser element and projected to a photodetector, by an inclined end surface in the photodetector and changing the direction of laser beams. CONSTITUTION:A semiconductor laser takes an internal striped type in which an N-type GaAs current block layer 9 is formed onto a P-type GaAs substrate 2, currents are concentrated to a V groove section from which the block layer 9 is removed, and laser oscillations at a low threshold are conducted by an active layer 4 just above the V groove. Since the semiconductor laser has a P-N junction consisting of a P-type clad layer 3 and an N-type clad layer 5, the same structure is also used as a photodetector. Laser beams emitted from an end surface oppositely faced to the photodetector of the semiconductor laser are reflected by an inclined end surface in the photodetector, and projected in the direction vertical to a substrate surface. Photocurrents are generated by partial beams simultaneously projected to the photodetector, and monitor signals are acquired.
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