发明名称 METHOD AND APPARATUS FOR TREATING WAFER
摘要 PURPOSE:To continuously anneal wafers without washing them, by irradiating the wafers with short-wavelength ultraviolet rays for producing ozone and removing the resist on the wafers. CONSTITUTION:A wafer 16 is moved from a cassette loader 15 located on the upstream side of an ultraviolet irradiation section to a belt conveyer 13 with the wafer surface on which a resist is to be adhered directed upwards and is further transferred onto a carrying table 6. The wafer 16 is heated to a predetermined temperature from its rear face by a plate heater 5, while it is irradiated with ultraviolet rays by a ultraviolet lamp 7 from the upside. Simultaneously, the ultraviolet treatment section 12 is continuously supplied with oxygen gas by a gas supply section. The wafers 16 are advanced by a conveyer means by one pitch and moved sequentially to the right-hand direction. The resist on the wafer 16 is completely removed during this movement. The wafers 16 are than introduced through a gate 11 into a buffer section, where they are purged of oxygen. The wafers 16 are transferred to an annealing section, where they are annealed by heating the same with the plate heater 5.
申请公布号 JPS61290724(A) 申请公布日期 1986.12.20
申请号 JP19850131880 申请日期 1985.06.19
申请人 HITACHI LTD 发明人 CHIKAOKA RYOSAKU;MAEJIMA HIROSHI;WAKIYAMA FUMITOSHI;HANAJIMA SHUICHI;OOSAKAYA TAKAYOSHI
分类号 H01L21/302;H01L21/3065;H01L21/311 主分类号 H01L21/302
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