| 摘要 |
PURPOSE:To reduce a crystal grain boundary and crystal dislocation by forming a thick single crystal semiconductor film by selective epitaxial growth after a thin single crystal semiconductor film is formed by beam annealing. CONSTITUTION:A polycrystalline silicon film 12' 1,000Angstrom thick is adhered on an insulation substrate 11. Then, a 3-5mum square island region is formed by patterning the polycrystalline silicon film 12' adhered on all the surface. Then, the polycrystalline silicon film on the surface is heated and melted by irradiation with continuous argon laser beam and all the film is metamorphosed to a single crystal silicon film 12. Then, a single crystal silicon film 13 5,000Angstrom -1mum thick is epitaxially grown selectively on the upper surface of the single crystal silicon film 12. Then, a semiconductor element is formed in the regions of the single crystal silicon films 12, 13 and an IC is completed.
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