发明名称 |
HEAT TREATMENT FOR SEMICONDUCTOR THIN FILM |
摘要 |
PURPOSE:To enable to favorably perform a heat treatment on a semiconductor thin film utilizing an ultraviolet irradiation annealing method by a method wherein the good ultraviolet absorber is arranged in the vicinity of the semiconductor thin film to be formed on the substrate. CONSTITUTION:An ultraviolet irradiation annealing is applied to a semiconductor thin film (silicon thin film) 4 in a state that a good ultraviolet absorber 2 is arranged in the vicinity of the semiconductor thin film 4, thereby heat absorption into the semiconductor thin film 4 is promoted, the temperature of the semiconductor thin film 4 is made to rise and a heat treatment is applied to the semiconductor thin film 4 with the normal ultraviolet power of the ultraviolet irradiation annealing device. Accordingly an augmentation of the crystal grains of the semiconductor thin film 4 or an activation in the semiconductor thin film 4 in after an impurity is ion-implantated in the semiconductor thin film 4 can be done by an ultraviolet irradiation annealing method.
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申请公布号 |
JPS61289620(A) |
申请公布日期 |
1986.12.19 |
申请号 |
JP19850132646 |
申请日期 |
1985.06.18 |
申请人 |
SONY CORP |
发明人 |
NOGUCHI TAKASHI;MORITA YASUSHI;HAYASHI HISAO |
分类号 |
H01L29/78;H01L21/20;H01L21/26;H01L21/263;H01L21/265 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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