发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To obtain the seconductor memory device having the many functions suitable for processing the highly speedy picture data by deciding the level of the prescribed control signal supplied prior to the essential chip selecting signal, fetching it as a function signal and providing the internal circuit to execute various data processings. CONSTITUTION:In the writing action mode to make a write enable signal, the inverse of WE into the low level, a writing signal DB supplied from an external terminal Di is fetched through a data input circuit IB. When by setting the function, a function setting circuit FN indicates an AND calculation to a logic operation circuit LU, the logic operation circuit LU forms a signal DA of a latch circuit F and an AND signal DA.DB of a writing signal DB, and transfers them to an input output node I/O. Into the selected memory cell, the signal DA.DB is written, and by the writing action of one cycle, the memory information of the memory cell can be replaced to the picture element data in accordance with the logic operation of the signal and the writing signal supplied from the external terminal. Thus, the function setting can be easily executed.</p>
申请公布号 JPS61289595(A) 申请公布日期 1986.12.19
申请号 JP19850129826 申请日期 1985.06.17
申请人 HITACHI LTD 发明人 YAMAGUCHI YASUNORI;MIYAKE JUN
分类号 G11C11/401;G11C7/00;G11C7/10;H04N5/907 主分类号 G11C11/401
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