PHYSICAL LAYOUT AND STRUCTURE OF RGBZ PIXEL CELL UNIT FOR RGBZ IMAGE SENSOR

摘要

An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.