发明名称 READ ONLY SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To execute the asynchronization and to execute the low power consumption by providing the input line to connect the same column of the transistor of the transistor pair and the output line to connect the same row of the transistor of the transistor pair, and operating only one side of two transistors to constitute the transistor pair. CONSTITUTION:The source of a (p) channel transistor PQ11 is connected to a VDD, in the transistor pair to have the meaning of '0', the source of an (n) channel transistor NQ31 is connected to a VSS and the source of (p) channel transistors PQ21 and PQ31 is open. When in the circuit, a word line WL1 is selected and w1=1 is inputted, (n) channel transistors NQ21 and NQ31 are turned on, bit lines BL2 and BL3 are respectively pulled down to the grounding level and for the (p) channel transistor PQ11 which is turned on by -w1=0, a bit line BL1 is pulled up to a VDD level, and to bit lines BL1-BL3, the data of '1', '0' and '0' are respectively outputted. Thus, the low power consumption, the low price and the high performance can be executed.
申请公布号 JPS61289598(A) 申请公布日期 1986.12.19
申请号 JP19850131373 申请日期 1985.06.17
申请人 TOSHIBA CORP 发明人 UCHINO YUKINORI;SUZUKI HIROAKI
分类号 G11C17/12;G11C17/16;H01L21/82;H01L21/8246;H01L27/10;H01L27/112;H01L27/118 主分类号 G11C17/12
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