| 摘要 |
The present invention relates to a charge transfer device with coupled gates. This device comprises a silicon semiconductor substrate 1 covered by a dielectric layer 2, 3, 4, with two levels of gates G1, G2, and means 12 of making the transfer of charges one-way. This device includes a succession of gates G'1, G'2, G'3 deposited on the dielectric layer. These gates are insulated from one another by a dielectric layer having a first portion 7, substantially perpendicular to the substrate, connected to a second portion 6, substantially parallel to the substrate, which penetrates into each gate so as to determine a gate of a first level G1 connected to a gate of a second level G2 beneath which are produced the means 12 for making the transfer one-way. <IMAGE>
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