| 摘要 |
PURPOSE:To detect the fused state of a semiconductor layer by a method wherein, when the semiconductor layer is fused by projecting an energy beam, the radiant light to be emitted from the semiconductor layer is imaged. CONSTITUTION:The incident angles of two beams of an energy beam (melting beam) 21 and a preheating beam 22 are respectively changed and the two beams 21 and 22 are made to incide in a lens 6 and are projected on a sample 1. As the polycrystalline silicon film, which is made its temperature rise, emits radiant light, the radiant light is enlarged by a microscope 4, is imaged by a TV camera, which is the imaging means, and is displayed on a monitoring TV 5. At this time, as laser beam having a powerful intensity also incides in the imaging means 3 (TV camera) through the microscope 4, an Ar laser beam cutting filter 32 is set in before the imaging means 3 so that the radiant light only comes into the TV camera 3. Moreover, for viewing simultaneously the pattern configuration and the part heated with the beam 22, a high-speed shutter 31, which synchronizes with the imaging means 3, is set in before the microscope 4. By this constitution, the radiant light to be emitted from the part heated with the laser beam 22 is intensified along with the temperature of the heated part, but once the part fuses, the intensity of the radiant light drops and the boundary between the solid phase part and the liquid phase part is distinctly identified. |
