| 摘要 |
PURPOSE:To restrain securely the generation of failure, such as breaking of the gate of a semiconductor device to be manufactured, in all the regions in the semiconductor wafer by a method wherein part of the surface insulating film, which is the part to correspond to the region of the scribing lines of the semiconductor wafer surface, is removed. CONSTITUTION:Part of an insulating film 14, which is the part to correspond to the region L of the scribing lines 13 of the surface of a semiconductor wafer 11, whereon the insulating film 14 is formed, is removed before a process, wherein electrification is made to generate in the insulating film 14, in the manufacturing process of this semiconductor device and part of the surface of the semiconductor wafer 11 which is the part equivalent to the region of the scribing lines 13 of the surface of the semiconductor wafer 11, is made to expose so that the charge being electrified in the insulating film 14 is quickly leaked in parts of the region of the scribing lines 13, which are closest to the insulating films 14. By this way, the charge is prevented from being accumulated over the whole surface of the semiconductor wafer. As a result, the generation of failure, such as breaking of the gate of the semiconductor element to be manufacture, is efficiently prevented.
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