| 摘要 |
PURPOSE:To eliminate the effect of a flow of gas onto semiconductor wafers being held on the internal side of the rotatable susceptor and to increase the growth rates of the thin films to be formed on the wafers with a good uniformity by a method wherein the rotatable susceptor and the swingable gas feed opening are provided in the dome type reaction chamber, which can be heated at an equal temperature from its periphery. CONSTITUTION:Semiconductor wafers 3 are held on the internal side of a recess-shaped multifaceted susceptor 4 in the interior of a dome type reaction chamber, which is being heated by heaters 1 from its periphery. The multifaceted susceptor 4 is made to rotate by the motor to be provided outside the dome type reaction chamber 2. The exhaust from the dome type reaction chamber 2 is executed through exhaust vents 5 being positioned under the lower part of the multifaceted susceptor 4 and the gas feed is executed through a swingable gas feed opening 6. The gas feed opening 6 is formed into a configuration that holes are arranged in a row along the surface of the cylindrical quartz tube, is made to position over the upper side of the multifaceted susceptor 4 and is made to swing with the rectangular direction to the rotating shaft of the multifaceted susceptor 4 as its axis. By providing the swingable gas feed opening 6 and the multifaceted susceptor 4 in the interior of the dome type reaction chamber 2 being surrounded with the heaters 1 arranged on its periphery in such a way, a vapor-phase growth can be attained with a good uniformity.
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