| 摘要 |
PURPOSE:To make it possible to control the tapered shape of an Al-Si alloy film in a highly accurate manner by a method wherein the thickness of the first and the second photoresist films and the amount of the first and the second photoresost films and the amount of exposure of a pattern are controlled properly. CONSTITUTION:After an Si dioxide film 2 is formed on the surface of a silicon substrate 1, an Al-Si alloy film 3 of approximately 1mum thickness containing the silicon of approximately 1wt% is formed. The first positive photoresist film 4 of approximately 1.0mum thickness and a positive type photoresist film 5 of approximately 0.5mum thickness having the sensitivity lower than that of said photoresist 4, is formed. Then, when the exposure treatment and the pattern developing treatment for formation of a pattern are performed on the photoresist films 4 and 5, these films can be formed in the cross-sectional shape wherein the photoresist film 5 is brought into overhang form for the photoresist film 4. When a dry etching treatment is performed on the Al-Si alloy film 3 using said photoresist film as a mask, the wiring pattern of the Al-Si alloy film 3 having an excellent tapered shape can be formed.
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