发明名称 MANUFACTURE OF MULTILAYER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive the improvement in heat dissipating efficiency by inserting heat dissipation panels among the chips to enhance a heat dissipating area and projecting the end part of the heat dissipation panel to enhance the heat dissipating area, and further by attaching a heat sink on the side plane of a lamination chip type multilayer semiconductor device. CONSTITUTION:Elements 2 are formed on one side of a semiconductor wafers 1 and another side of this semiconductor wafer 1 is polished to reduce the thickness. Two of such wafers and a metallic plate 3 composing a dissipation panel are bonded mutually by use of a silver paste or the like, thereby forming a set 4 of the semiconductor wafers 1. Then, plural sets of such semiconductor wafer 1 set 4 are bonded to form a wafer laminated body 6 comprising the multilayer semiconductor device sets. This wafer laminated body 6 is sliced by each set of multilayer semiconductor device so as to form a multilayer semiconductor device chip 7. If the semiconductor layer 1 and an insulating layer 5 are removed to project the end part 31 of the metallic plate 3, a heat dissipating area is enhance. Also, if a large heat sink 12 is prepared to be fixed to one of the side planes of the above-mentioned semiconductor device, the heat dissipating effect is further improved.
申请公布号 JPS61288455(A) 申请公布日期 1986.12.18
申请号 JP19850131009 申请日期 1985.06.17
申请人 FUJITSU LTD 发明人 KATO TAKASHI
分类号 H01L25/18;H01L23/36;H01L25/065;H01L25/07;H01L27/00 主分类号 H01L25/18
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