| 摘要 |
PURPOSE:To enhance the variance of the circuit fabrication and to contrive the improvement in integration by forming active elements on active elements and metallic wirings through an interlaminar insulating film after forming the active elements and the metallic wirings on a semiconductor substrate. CONSTITUTION:Active elements 2 and metallic wirings 3 are formed on a semiconductor substrate 1. Next, an interlaminar insulating film 4 is formed on the active elements 2 and the metallic wirings 3 and on the interlaminar insulating film 4, a polycrystalline semiconductor layer is formed. It is recrystallized to form active elements 22. At this time, the polycrystal-line semiconductor layer is formed selectively in a desired position by etching, etc. and also it is connected to the wiring previously formed. Thus, the active elements 2 and the metallic wirings 3 on the substrate 1 are formed and furthermore, the active elements 22 are additionally formed in a desired position through the interlaminar insulating film 4, so that the variance of the circuit fabrication is enhanced and the elements which re not used in the circuit can be eliminated.
|
