| 摘要 |
PURPOSE:To contrive the levelling of the surface of contact part and to enable the omission of a lithography step for patterning a cell plate by forming a contact part of the cell plate by filling the groove which has been extended to such extent that a contact hole can be formed during the step for burying the cell plate in the groove by self-alignment at the same time. CONSTITUTION:A silicon thin film 3 is deposited. A thickness of this Si thin film 3 is made thick enough to completely fill the groove with a contact part of a cell plate electrode extended. Next, the Si thin film 3 only in the inside of the groove 12. Thermal oxidation is effected by using an Si nitride films 16 as a mask to form an Si oxide film 9 on the groove, after which the Si nitride film 16 and a pad Si oxide film 15 are removed. Furthermore, a gate oxide film 7 is formed and a gate electrod, an interlaminar insulating film 9, a contact hole 11, and further a metallic wiring 10 are formed. Thus, the width of the groove in which the contact part of the electrode is buried is extended so as to reduce a difference in level of the surface, thereby preventing the disconnection of wiring the step part of the wiring. Also, the density of the memory can be enhanced by burying the electrode inside the groove by selfalignment. |
