| 摘要 |
PURPOSE:To manufacture easily a single vertical mode of a semiconductor laser, by forming a stripe region for generating and guiding light, in parallel to the surface of the semiconductor substrate and with being bended, and by arraying every element having a cyclic structure for feeding back the light in the stripe region selectively, along parallel lines with an uniform interval. CONSTITUTION:Before the epitaxial growth of the N-type InGaAsP wave guiding layer 3, the diffraction grating 9 which has a pitch A=40 corresponding to a defree m=2, is formed on the upper face of the N-type InP confining layer 2. The pattern may be easily formed by prior arts. The plane configuration of the stripe region has straight line sections A,C of the [011] direction and a straight line section B with a length of L=100mum in the direction of an angle of theta=2.6 degrees to them. The width of the stripe region is about 2mum at the active layer 4, and the laser length is about 400mum. The stripe region may be easily formed by forming the mask for the mesa etching and then by etching of prior arts, after the P-type InGaAsP contact layer 6 was grown. |
