| 摘要 |
PURPOSE:To provide a semiconductor laser device which is simple in the manufacturing process, has increased stability of the oscillating wavelength, and has a function for detecting the strength of the laser light, by coating a reflective film made of dielectric being possible to increase the reflection factor, on a portion of the cleavage face. CONSTITUTION:The semiconductor chip 7 placed on the same mount base as the semiconductor laser element 1 being opposed to it, has a function of alight detector, and is comprised of a P-type GaAs layer 20 and an N-type GaAs layer 21 and an N-side electrod 22 and a P-side electrode23 formed on each layer. One of the side faces is a light receiving face 24 formed by cleavage, being opposed to the laser light projecting face at the back of the semiconductor laser element 1. Moreover, on a portion of the light receiving face 24, a multi- layer film Al2O3 and a-Si dielectric is coated in an elongated belt shape by electron beam evaporation or sputtering, forming a reflective film 25 for reflecting the laser light.
|
