| 摘要 |
PURPOSE:To contrive stabilization of the characteristics of the title semiconductor device by a method wherein the infiltration of sodium into a substrate when a resist ashing treatment is performed is prevented by inserting a metal film between a resist and a substrate in a pattern forming process. CONSTITUTION:An Si oxide film 102 is formed by performing a thermal oxidization on an SiO substrate 101, and then a thin Mo film 103 is deposited thereon. A resist 104 is applied, a prescribed baking is performed, and then a resist pattern 105 is formed by performing exposing and developing treatment. Subsequently, the Mo film is etched using the resist pattern 105 as a mask, and an Mo pattern 106 and a silicon oxide film pattern 107 are formed by etching the Si oxide film. Then, the resist pattern 105 is incinerated in oxygenous plasma using a cylindrical type incinerating device, and after the resist is removed, the Mo pattern located under the resist pattern is removed using sulfuric acid and hydrogen peroxide mixed solution. An Si oxide film pattern is formed by performing the above-mentioned procedures.
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