| 摘要 |
Process for forming and passivating a tungsten layer, comprising the following steps consisting in: a) depositing (S1), by PVD deposition, a tungsten layer on a substrate; and b) depositing (S2) by PVD deposition, a tungsten oxide passivation layer on the tungsten layer, by reactive sputtering in a plasma containing dioxygen, the tungsten oxide layer as deposited being amorphous and having a resistivity of between 5 × 10-2 and 5 × 10-3 Ω.cm, the substrate being kept in an inert atmosphere between step a) and step b). |
