发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To relax noises, and to prevent the deterioration of the sensitivity of a sense amplifier by forming a third conductive layer for relaxing stress by a resin onto a MOS transistor constituting the sense amplifier and grounding the third conductive layer. CONSTITUTION:A second layer Al wiring 13 as a third conductive layer is grounded. In such an example, the second layer Al wiring 13 not only fills the role of a buffer layer relaxing the residual stress of molding but also reduces noises from the outside. Accordingly, noises given to a sense amplifier are relaxed, and stress can also be mitigated. THe deterioration of the sensitivity of a sense amplifier circuit can be inhibited.
申请公布号 JPS61287154(A) 申请公布日期 1986.12.17
申请号 JP19850128835 申请日期 1985.06.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMOTO KAZUTAMI;MASUKO KOICHIRO
分类号 H01L27/088;G11C11/34;G11C11/41;H01L21/8234;H01L21/8242;H01L23/28;H01L27/08;H01L27/10;H01L27/108 主分类号 H01L27/088
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