| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit film separation near a boundary of a region from which an unnecessary conductive film is removed, to improve yield and inhibit contamination associated with exposure of the conductive film, which is caused by a conductive film material.SOLUTION: A semiconductor device manufacturing method comprises: a step of forming a plurality of recesses 604 in an interlayer insulation film 114 formed on a semiconductor wafer 110 and on effective chip regions and ineffective chip regions; a step of forming a copper film 121 on the interlayer insulation film 114 so as to fill the plurality of recesses 604; a step of removing the copper film 121 on the ineffective chip regions while leaving the copper film 121 on the effective chip regions; and a step of removing portions of the copper film 121 left on the effective chip regions, on the outside of the plurality of recesses 604. An area occupancy of the recess 604 which has a projected area on a wafer of 10 μmor less out of the plurality of recesses 604 is higher in the ineffective chip region than in the effective chip region.SELECTED DRAWING: Figure 10 |
