Semiconductor laser device.

摘要

A semiconductor laser device has a multi-layered growth crystal (100) having an active layer (14) therein for laser oscillation, but having no substrate, a buffer layer (16) formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal, and a p-sided electrode (18) and an n-sided electrode (17) sandwiching therebetween the composite of said multi-layered growth crystal (100) and said buffer layer (16).