| 摘要 |
PURPOSE:To obtain a sufficient hermetical seal in response to a reduction in a sealing area by reducing the diffusing distance of low melting point glass component on an aluminum film of a lead frame interposed fixedly between low melting point glass layers at least to 20Angstrom . CONSTITUTION:An aluminum film 13 is formed by a high frequency ion implanting method on a lead frame 11 of Ni-Fe alloy. PbOB2O3 low melting point glass films 4, 9 of softening point of 350 deg.C are printed on an Al2O3 package, dried, and glazed. The glass side of the package and the aluminum film of the lead frame are contacted closely, held at 390 deg.C for 10min, and sealed. Since the molecules of glass of PbO are larger than aluminum atoms, the glass is hardly diffused so that the diffusing distance of 20Angstrom or larger is not normally performed, but the aluminum is remarkably activated due to the ion plating of one ionization so as to be diffused more rapidly by 20Angstrom or higher than the glass molecules. If a bias is 0.6KeV or higher at ion plating time, K, E are applied to the ionized aluminum to further activate it, thereby improving the sealability. |
