| 摘要 |
PURPOSE:To bury a contact hole by forming a polycrystalline Si or amorphous Si layer onto a metallic wiring, shaping an inter-layer insulating film and the contact hole and selectively precipitating and depositing W or Mo onto the exposed polycrystalline Si or amorphous Si layer. CONSTITUTION:A lower layer wiring layer 3 consisting of Al, etc. is formed onto an insulating film 2, a polycrystalline Si or amorphous Si layer 4 is shaped onto the layer 3, the Si layer 4 and the lower layer wiring layer 3 are left as desired wiring patterns, an inter-layer insulating film 5 is formed, and a contact hole 6 is shaped. The Si layer 4 is exposed to the base of said contact hole 6 at that time. W or Mo is precipitated selectively on the base of the contact hole through a CVD method at approximately 250-500 deg.C while using WF6 or MoF6 as a source gas and H2 as a carrier gas, and the thickness of the Si layer is determined so that Si is consumed completely and Si is not left among W or Mo in the lower layer wiring layer and the contact hole at that time. W or Mo formed on the base of the contact hole 6 functions as nuclei, and W or Mo is further precipitated and deposited, and buries the contact hole. |
