| 摘要 |
PURPOSE:To improve the reliability of a semiconductor memory device by burying a pinhole portion existing near a boundary of an Si nitride film/an Si oxide film important as a memory with an Si nitride film, thereby obtaining stable memory characteristic. CONSTITUTION:Source and drain regions 2, 3 are formed by selectively diffusing technique on an silicon substrate 1, and the prescribed part of a silicon oxide film 4 formed at the selectively diffusing time is opened by etching. A thin silicon oxide film 5 oxidized in oxygen atmosphere is formed in the hole. Then, the first silicon nitride film 6 is formed in the prescribed thickness by a vapor- phase growing method by chemical reaction of silane and ammonia on the film 4. Further, the second silicon nitride film 8 is formed by a vapor-phase growing method on the film 6, and a pinhole 7 of the film 6 is buried with a silicon nitride film 9 in the step of growing the film 8. A silicon oxide film 10 and a gate electrode 11 are eventually formed on the film 8 to improve the reliability of a semiconductor memory device. |
