| 摘要 |
PURPOSE:To form a highly precise V-shaped groove, to make small a stepping, and to prevent the generation of disconnection of wire and the like on a metal electrode by a method wherein a selective oxidation is performed using a nitride film, an aperture part is provided in the non-selective oxide region where a nitride film is formed, where V-shaped groove is provided. CONSTITUTION:A P-type epitaxial layer 2, having the density lower than that of a substrate, is deposited on the upper layer of a P<+> type semiconductor substrate 1, an underlaid oxide film 8 and a nitride film 9 are formed on the main surface of the layer 2, and they are oxidized. After an interlayer insulating film 4 is deposited, an aperture part 5 is provided in the non-selective oxide region whereon the nitride film is formed, and the P-type epitaxial layer 2 is exposed. Said aperture part 5 is formed almost in the same shape as the nitride film 9 and in the size smaller than the nitride film. A V-shaped groove 6 penetrating the layer 2 and reaching the P<+> type semiconductor substrate 1 is formed, and subsequently, the region 10 having high density side face is formed, a metal electrode 7 is arranged in the V-shaped groove 6, and the electrode on the surface is connected to the P<+> type semiconductor substrate 1.
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