发明名称 LIQUID-PHASE EPITAXIAL GROWTH METHOD AND EQUIPMENT THEREFOR
摘要 PURPOSE:To enable the formation of a thin epitaxial layer by sealing a melted layer material solution charging chamber, holding it at the prescribed temperature, then forming a space at the top of the chamber, and cooling while adjusting the volume of the space. CONSTITUTION:A substrate 23 is fixed to the recess 24 of a substrate holder 21, and laminated layer forming materials are charged in 4 melted solution charging chambers 30 of a substrate holder 22. A large-sized cover 28' is mounted in the chambers 30 which contains a material 31 for forming a laminated layer. A boat 20 is held at the prescribed temperature for the prescribed time, and the materials in the chambers 30 are uniformly mixed. Then, an atmosphere is started cooling, the holder 22 is slid to place the chambers 30 on the substrate 23, and an epitaxial layer is grown on the substrate 23. Simultaneously, a wedge-shaped jig 35 is pressed to the lower portion of the cover 28', a space is formed at the top of the chamber 30 to reduce the thermal capacity, thereby quickly cooling. Thus, a material component is precipitated in a source crystal 32 disposed near the liquid surface to reduce the oversaturation in the chamber. The chamber 30 is moved to form a thin layer on the substrate 23. Similarly, epitaxial layers are sequentially formed on the substrate 23.
申请公布号 JPS61287221(A) 申请公布日期 1986.12.17
申请号 JP19850130332 申请日期 1985.06.14
申请人 SHARP CORP 发明人 HAYASHI HIROSHI;MORIMOTO TAIJI;YAMAMOTO SABURO
分类号 H01L21/208;C30B19/00;H01S5/00 主分类号 H01L21/208
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