| 摘要 |
PURPOSE:To shorten a time for removing an electric potential difference between bit line pairs which prevents the realization of a high speed operation by providing a conductive means controlled by a signal between a source and the bit line pairs connected to a flip flop in common. CONSTITUTION:A sense amplifier 11A is provided with a conductive means constituted by N channel transistors Q18N, Q19N and situated between bit line pairs D1, the inverse of D1 and the common source of a flip flop. When a memory is activated, electric potentials of phi 12, the inverse of phi 12 respectively go to Vcc and GND and subsequently, the electric potential of a signal phi 11 goes to Vcc. An N channel transistor Q13N makes conductive bit line pairs D, -D; and the transistors Q18N, Q19N make conductive bit lines D1, the inverse of D1 and a nodal point N12 and an N channel transistor Q16 N makes conductive a nodal point N11. The nodal points N11, N12 and the bit lines D1, the inverse of D1 are made conductive without passing through the flip flop, and an electric potential difference between the bit lines D1, the inverse of D1 can be removed in a short time.
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